A Submicrometer High-Performance Bipolar Technology
- Tze-Chiang Chen
- Kai-Yap Toh
- et al.
- 1989
- IEEE Electron Device Letters
Publications
307 results at IEEE Electron Device Letters
Selective Epitaxy Base Transistor (SEBT)
- J.N. Burghartz
- B.J. Ginsberg
- et al.
- 1988
- IEEE Electron Device Letters
Noncontact Internal Waveform Measurements with Picosecond Time Resolution on a 0.5-/xm CMOS SRAM
- Yvon Pastol
- Jean-Marc Halbout
- et al.
- 1988
- IEEE Electron Device Letters
Unpinned GaAs MOS Capacitors and Transistors
- Sandip Tiwari
- Steven L. Wright
- et al.
- 1988
- IEEE Electron Device Letters
Highspeed 1.3-μm GalnAs Detectors Fabricated on GaAs Substrates
- Dennis L. Rogers
- Jerry M. Woodall
- et al.
- 1988
- IEEE Electron Device Letters
Silicon-Germanium-Base Heterojunction Bipolar Transistors By Molecular Beam Epitaxy
- Gary L. Patton
- Subramanian S. Iyer
- et al.
- 1988
- IEEE Electron Device Letters
High Transconductance and Velocity Overshoot in NMOS Devices at the 0.1-μm Gate-Length Level
- George A. Sai-Halasz
- Matthew R. Wordeman
- et al.
- 1988
- IEEE Electron Device Letters
Heterostructure Devices Using Self-Aligned p-Type Diffused Ohmic Contacts
- Sandip Tiwari
- Alyce Ginzberg
- et al.
- 1988
- IEEE Electron Device Letters
A New Effect at High Currents in Heterostructure Bipolar Transistors
- Sandip Tiwari
- 1988
- IEEE Electron Device Letters
p-Channel Quantum-Well Heterostructure MI3 SFET
- Richard A. Kiehl
- Sandip Tiwari
- et al.
- 1988
- IEEE Electron Device Letters