H. Qiang, Fred H. Pollak, et al.
Surface Science
High-speed interdigitated metal-semiconductor-metal (IMSM) detectors have been fabricated on non-lattice-matched, semiinsulating, GaAs substrates using two GalnAs layers of differing indium concentrations to accommodate most of the lattice mismatch via interface misfit dislocations. Bandwidths as high as 3 GHz were measured with none of the detrimental low-frequency gain usually observed in this type of device. This is attributed to the inhibition of the surface trapping of photoinduced carriers by means of a graded pseudomorphic layer at the surface. © 1988 IEEE.
H. Qiang, Fred H. Pollak, et al.
Surface Science
J.H. Burroughes, M.S. Milshtein, et al.
IEEE Photonics Technology Letters
Yiu-Man Wong, Dirk J. Muehlner, et al.
Journal of Lightwave Technology
J.H. Burroughes, D.L. Rogers, et al.
IEEE Photonics Technology Letters