C.M. Brown, L. Cristofolini, et al.
Chemistry of Materials
Photoreflectance has been used to measure the direct band gap of InxGa1-xAs (x=0.06 and 0.15) over a wide temperature range from 18 to 873 K. We have evaluated the parameters that describe the temperature dependence of the band gap and broadening function. © 1991 The American Physical Society.
C.M. Brown, L. Cristofolini, et al.
Chemistry of Materials
Min Yang, Jeremy Schaub, et al.
Technical Digest-International Electron Devices Meeting
R. Ghez, J.S. Lew
Journal of Crystal Growth
T. Schneider, E. Stoll
Physical Review B