A statistical study of magnetic tunnel junctions for high-density spin torque transfer-MRAM (STT-MRAM)R. BeachT. Minet al.2008IEDM 2008
Improved effective switching current (Ieff+) and capacitance methodology for CMOS circuit performance prediction and model-to-hardware correlationXiaojun YuShu-Jen Hanet al.2008IEDM 2008
Mobility extraction and quantum capacitance impact in high performance graphene field-effect transistor devicesZhihong ChenJoerg Appenzeller2008IEDM 2008
Experimental and theoretical analysis of factors causing asymmetrical temperature dependence of vt in High-k Metal gate CMOS with capped High-k techniquesRyosuke IijimaMariko Takayanagi2008IEDM 2008
Mechanisms of retention loss in Ge2Sb2Te 5-based phase-change memoryY.H. ShihJ.Y. Wuet al.2008IEDM 2008
32nm general purpose bulk CMOS technology for high performance applications at low voltageF. ArnaudJ. Liuet al.2008IEDM 2008
22 nm technology compatible fully functional 0.1 μm 2 6T-sram cellB. HaranA. Kumaret al.2008IEDM 2008
MOSFET performance scaling: Limitations and future optionsDimitri A. AntoniadisAli Khakifirooz2008IEDM 2008
A 300-mm wafer-level three-dimensional integration scheme using tungsten through-silicon via and hybrid cu-adhesive bondingF. LiuR.R. Yuet al.2008IEDM 2008