A Low-Capacitance Bipolar/BiCMOS Isolation Technology, Part I—Concept, Fabrication Process, and Characterization
- Joachim N. Burghartz
- Robert C. McIntosh
- et al.
- 1994
- IEEE Transactions on Electron Devices
Publications
136 results at IEEE Transactions on Electron Devices
SiGe-Channel Heterojunction p-MOSFET’s
- Sophie Verdonckt-Vandebroek
- Bernard S. Meyerson
- et al.
- 1994
- IEEE Transactions on Electron Devices
Si/Si1-xGexValence Band Discontinuity Measurements Using a Semiconductor-Insulator-Semiconductor (SIS) Heterostructure
- Brian R. Bennett
- Emmanuel F. Crabbé
- et al.
- 1994
- IEEE Transactions on Electron Devices
A Low-Capacitance Bipolar/BiCMOS Isolation Technology, Part II—Circuit Performance and Device Self-Heating
- Joachim N. Burghartz
- Arturo O. Cifuentes
- et al.
- 1994
- IEEE Transactions on Electron Devices
IIA-9 Undoped SiGe Heterostructure Field Effect Transistors
- T.N. Jackson
- S. Nelson
- et al.
- 1993
- IEEE Transactions on Electron Devices
IIA-7 Monte Carlo Simulations of p-and n-Channel Dual-Gate Si MOSFET's at the Limits of Scaling
- D.J. Frank
- S.E. Laux
- et al.
- 1993
- IEEE Transactions on Electron Devices
The Effect of Trench Corner Shapes on Local Stress Fields : A Three-Dimensional Finite-Element Modeling Study
- Scott R. Stiffler
- Arturo O. Cifuentes
- 1993
- IEEE Transactions on Electron Devices
On the Profile Design and Optimization of Epitaxial Si and SiGe-Base Bipolar Technology for 77 K Applications—Part II: Circuit Performance Issues
- John D. Cressler
- Emmanuel F. Crabbé
- et al.
- 1993
- IEEE Transactions on Electron Devices
Investigation of the Impact Ionization in the Hydrodynamic Model
- Kamel Souissi
- Farouk Odeh
- et al.
- 1993
- IEEE Transactions on Electron Devices
Electrical and Optical Bandgaps of GexSi1-x Strained Layers
- J.J. Loferski
- J. Nijs
- et al.
- 1993
- IEEE Transactions on Electron Devices