Publications

136 results at IEEE Transactions on Electron Devices

A Room Temperature 0.1 µm CMOS on SOI
- - Ghavam G. Shahidi
  - Carl A. Anderson
  - et al.
- 1994
- IEEE Transactions on Electron Devices
A Comparison of Numerical Solutions of the Boltzmann Transport Equation for High-Energy Electron Transport Silicon
- - Thomas Vogelsang
  - Masaaki Tomizawa
  - et al.
- 1994
- IEEE Transactions on Electron Devices
A Low-Capacitance Bipolar/BiCMOS Isolation Technology, Part I—Concept, Fabrication Process, and Characterization
- - Joachim N. Burghartz
  - Robert C. McIntosh
  - et al.
- 1994
- IEEE Transactions on Electron Devices
SiGe-Channel Heterojunction p-MOSFET’s
- - Sophie Verdonckt-Vandebroek
  - Bernard S. Meyerson
  - et al.
- 1994
- IEEE Transactions on Electron Devices
Non-Quasi-Static Transient and Small-Signal Two-Dimensional Modeling of GaAs MESFET's with Emphasis on Distributed Effects
- - Sandip Tiwari
- 1993
- IEEE Transactions on Electron Devices
IIA-9 Undoped SiGe Heterostructure Field Effect Transistors
- - T.N. Jackson
  - S. Nelson
  - et al.
- 1993
- IEEE Transactions on Electron Devices
IVB-6 a-Si Thin Film Transistors Using Dilute-Gas Plasma-Enhanced Chemical Vapor Deposition
- - S.L. Wright
  - M.B. Rothwell
  - et al.
- 1993
- IEEE Transactions on Electron Devices
VIA-7 In As Bipolar Transistors: A Path to High-Performance Cryogenic Electronics
- - P.E. Dodd
  - M.R. Melloch
  - et al.
- 1993
- IEEE Transactions on Electron Devices
Electrical and Optical Bandgaps of GexSi1-x Strained Layers
- - J.J. Loferski
  - J. Nijs
  - et al.
- 1993
- IEEE Transactions on Electron Devices
On the Profile Design and Optimization of Epitaxial Si and SiGe-Base Bipolar Technology for 77 K Applications—Part I: Transistor DC Design Considerations
- - John D. Cressler
  - James H. Comfort
  - et al.
- 1993
- IEEE Transactions on Electron Devices