ReviewComment on "Influence of the doping element on the electron mobility in n silicon" [J. Appl. Phys. 83, 3096 (1998)]M.V. Fischetti, S.E. LauxJournal of Applied Physics
Conference paperIncreasing threshold voltage variation due to random telegraph noise in FETs as gate lengths scale to 20 nmN. Tega, H. Miki, et al.VLSI Technology 2009
PaperStrained quantum well valence-band structure and optimal parameters for AlGaAs-InGaAs-AlGaAs p-channel field-effect transistorsB. Laikhtman, R.A. Kiehl, et al.Journal of Applied Physics
PaperTheory of electron transport in small semiconductor devices using the Pauli master equationM.V. FischettiJournal of Applied Physics
