High performance 14nm SOI FinFET CMOS technology with 0.0174μm2 embedded DRAM and 15 levels of Cu metallization
- C.-H.C-H. Lin
- Brian Greene
- et al.
- 2014
- IEDM 2014
Publications
9 results for B. Engel
22nm High-performance SOI technology featuring dual-embedded stressors, Epi-Plate High-K deep-trench embedded DRAM and self-aligned Via 15LM BEOL
- S. Narasimha
- P. Chang
- et al.
- 2012
- IEDM 2012
Competitive and cost effective copper/low-k interconnect (BEOL) for 28 nm CMOS technologies
- R. Augur
- C. Child
- et al.
- 2012
- Microelectronic Engineering
Competitive and cost effective copper/low-k interconnect (BEOL) for 28nm CMOS technologies
- Rod Augur
- Craig Child
- et al.
- 2010
- ADMETA 2010
UV curing-induced photoresist poisoning in advanced ULK BEOL integration schemes
- Y.C. Ee
- D. Kioussis
- et al.
- 2009
- ADMETA 2009
65nm Cu integration and interconnect reliability in low stress K=2.75 SiCOH
- V. McGahay
- G. Bonilla
- et al.
- 2006
- IITC 2006
Dual stress liner for high performance sub-45nm gate length SOI CMOS manufacturing
- H.S. Yang
- R. Malik
- et al.
- 2004
- IEDM 2004
Thermal cycle reliability of stacked via structures with copper metallization and an organic low-k dielectric
- R. Filippi
- J.F. McGrath
- et al.
- 2004
- IRPS 2004
Thermal cycle reliability of stacked via structures with copper metallization and an organic low-k dielectric
- R. Filippi
- J.F. McGrath
- et al.
- 2004
- IRPS 2004