Steven E. Laux, M.V. Fischetti
IEEE Electron Device Letters
Techniques for ascertaining the small-signal behavior of semiconductor devices in the context of numerical device simulation are discussed. Three standard approaches to this problem will be compared: (i) transient excitation followed by Fourier decomposition, (ii) incremental charge partitioning, and (iii) sinusoidal steady-state anal-ysis. Sinusoidal steady-state analysis is shown to be the superior approach by providing accurate, rigorously correct results with reasonable computational cost and programming commitment. Copyright © 1985 by The Institute of Electrical and Electronics Engineers, Inc.
Steven E. Laux, M.V. Fischetti
IEEE Electron Device Letters
Steven E. Laux
IEEE TCADIS
Jack Y. C. Sun, Matthew R. Wordeman, et al.
IEEE T-ED
Jeffrey Y.-F. Tang, Steven E. Laux
IEEE TCADIS