D.A. Buchanan, M.V. Fischetti, et al.
Applied Surface Science
Monte-Carlo simulation results for small silicon n-MOSFET's at 77 and 300 K are presented. A complete description of the silicon band structure including consistent scattering rates, electron-electron scattering, and plasma effects is included in the calculation for the first time. The dependence of transconductance on channel length is in excellent agreement with the experiments of Sai-Halasz et al. [1], [2], and serves to support the expectation of significant velocity overshoot in these devices. For extremely short channels ([formula omitted]) at 77 K, electron-electron scattering plays a significant role in determining the electron energy distribution, while at drain biases exceeding about 1.5 V, band structure effects can play an important role. © 1988 IEEE.
D.A. Buchanan, M.V. Fischetti, et al.
Applied Surface Science
S.E. Laux, M.V. Fischetti
IEDM 1997
S.E. Laux, M.V. Fischetti
IEDM 1994
Steven E. Laux, Karl Hess
IEEE Transactions on Electron Devices