Ming L. Yu, D. Grischkowsky, et al.
Physical Review Letters
Using GaAs epilayers with arsenic precipitates (GaAs) as the photoconductive material in a broad-band optoelectronic terahertz beam system, we have generated and detected freely propagating, subpicosecond electromagnetic pulses. The receiver signal gave a measured integrated pulse width of 0.71 ps. Fast photoconductive rise times have been achieved which are characteristic of good mobility GaAs. In addition, the material exhibits a short "effective" carrier lifetime of several ps due to the embedded, closely spaced (about 20 nm) arsenic precipitates.
Ming L. Yu, D. Grischkowsky, et al.
Physical Review Letters
D. Grischkowsky, R. Sprik, et al.
CLEO 1987
Joshua E. Rothenberg, D. Grischkowsky
CLEO 1984
S.B. Kaplan, Alan C. Warren
Physical Review B