N.J. Halas, W.J. Gallagher, et al.
IEEE Transactions on Magnetics
We demonstrate a new type of THz optoelectronic interferometer, by fully characterizing a recently developed THz source to beyond 6 THz, and by measuring the absorption coefficient of high-resistivity GaAs from 1 to 5 THz. The two source THz interferometer is driven with two 4 mW beams of 60 fs dye-laser pulses and produces interferograms with exceptional signal-to-noise ratios.
N.J. Halas, W.J. Gallagher, et al.
IEEE Transactions on Magnetics
B. Fan, Allen Lurio, et al.
Physical Review Letters
D. Grischkowsky, M.M.T. Loy, et al.
Physical Review A
D. Grischkowsky, J.A. Armstrong
Physical Review A