PaperSub-10-9 Ω-cm2 n-Type Contact Resistivity for FinFET TechnologyHiroaki Niimi, Zuoguang Liu, et al.IEEE Electron Device Letters
Conference paperParasitic Resistance Reduction for Aggressively Scaled Stacked Nanosheet TransistorsSu-Chen Fan, Ruilong Xie, et al.IITC 2020
PaperHigh-precision deformation mapping in finFET transistors with two nanometre spatial resolution by precession electron diffractionDavid Cooper, N. Bernier, et al.Applied Physics Letters
PaperHigh-precision deformation mapping in finFET transistors with two nanometre spatial resolution by precession electron diffractionDavid Cooper, N. Bernier, et al.Applied Physics Letters
