PaperSub-30-ps ECL Circuit Operation at Liquid-Nitrogen Temperature Using Self-Aligned Epitaxial SiGe-Base Bipolar TransistorsJohn D. Cressler, James H. Comfort, et al.IEEE Electron Device Letters
Paper73-GHz Self-Aligned SiGe-Base Bipolar Transistors with Phosphorus-Doped Polysilicon EmittersEmmanuel F. Crabbé, James H. Comfort, et al.IEEE Electron Device Letters
PaperCollector Signal Delay in the Presence of Velocity OvershootSteven E. Laux, Wai LeeIEEE Electron Device Letters
PaperPartial-SOI Isolation Structure for Reduced Bipolar Transistor ParasiticsJoachim N. Burghartz, John D. Cressler, et al.IEEE Electron Device Letters
