SiGe heterojunctions: Devices and applications
Maurizio Arienzo, James H. Comfort, et al.
ESSDERC 1992
We report the first operation of ECL circuits at liquid-nitrogen temperaure using self-aligned epitaxial SiGe-base bipolar transistors. A minimum ECL gate delay of 28.1 ps at 84 K was measured, and is essentially unchanged from its room-temperature value of 28.8 ps at 310 K. This delay number was achieved under full logic-swing (500 mV) conditions and represents an improvement of greater than a factor of 2 over the best reported value for 84-K operation. Lower power ECL circuits have switching speeds as fast as 51 ps at 2.2 mW (112-fJ power-delay product) at 84 K. These results suggest that silicon-based bipolar technology is suitable for very high-speed applications in cryogenic computer systems. © 1991 IEEE
Maurizio Arienzo, James H. Comfort, et al.
ESSDERC 1992
Joachim N. Burghartz, John D. Cressler, et al.
IEEE Electron Device Letters
James H. Comfort, Rafael Reif
JES
John D. Cressler, Emmanuel F. Crabbé, et al.
IEEE Transactions on Electron Devices