E. Burstein
Ferroelectrics
An extensive analysis of the substitutional dopant diffusion phenomena in silicon during oxidation is presented. The analysis covers qualitative as well as quantitative aspects of the oxidation-enhanced and -retarded diffusion (OED and ORD) phenomena, and examines three different possible assumptions that can be made on the nature of the silicon thermal equilibrium point defect species: silicon self-interstitials (I) only, vacancies (V) only, coexistence of I and V. The only consistent way to interpret all properly documented OED/ORD data is to assume that I and V coexist under oxidation as well as under thermal equilibrium conditions at high temperatures. © 1983 Springer-Verlag.
E. Burstein
Ferroelectrics
Elizabeth A. Sholler, Frederick M. Meyer, et al.
SPIE AeroSense 1997
R. Ghez, J.S. Lew
Journal of Crystal Growth
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