Conference paper
The ballistic FET with a current injector
P. Solomon
Physica E: Low-Dimensional Systems and Nanostructures
It has been observed that an inversion layer cannot form in a p-type silicon substrate when the Fowler-Nordheim tunneling current into the oxide exceeds the minority generation current in the depletion layer. On the other hand, for n-type substrates, the formation of the inversion layer is unaffected by the oxide current.
P. Solomon
Physica E: Low-Dimensional Systems and Nanostructures
G.M. Cohen, M.J. Rooks, et al.
Applied Physics Letters
P. Solomon, T.W. Hickmott, et al.
Applied Physics Letters
P. Solomon, D.J. Dimaria
Journal of Applied Physics