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Applied Physics Letters
Internal photoemission characteristics from the Al-SiO2 interface are markedly affected by a 400 °C 20 min forming gas (90% N 2 and 10% H2) anneal. The barrier height is raised by about 0.25 eV and the electric field dependence of the photocurrent is increased.
M.A. Tischler, T.F. Kuech, et al.
Applied Physics Letters
R.F. DeKeersmaecker, D.J. Dimaria
Journal of Applied Physics
D.J. Dimaria
Japanese Journal of Applied Physics
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Applied Physics Letters