Amiram Ron, D.J. Dimaria
Physical Review B
Internal photoemission characteristics from the Al-SiO2 interface are markedly affected by a 400 °C 20 min forming gas (90% N 2 and 10% H2) anneal. The barrier height is raised by about 0.25 eV and the electric field dependence of the photocurrent is increased.
Amiram Ron, D.J. Dimaria
Physical Review B
D.J. Dimaria, D.R. Young, et al.
Applied Physics Letters
T.W. Hickmott, P. Solomon, et al.
Physical Review Letters
P. Solomon, B. Laikhtman
Superlattices and Microstructures