Biancun Xie, Madhavan Swaminathan, et al.
EMC 2011
Interface state generation by hot electrons is studied using spin-dependent recombination. Hot electrons with average energy {most positive}2eV produce a paramagnetic recombination center, while hole annihilation at the Si/SiO2 interface does not produce this defect. The implications of these results for microscopic models of interface defect creation are discussed. © 1993.
Biancun Xie, Madhavan Swaminathan, et al.
EMC 2011
P. Martensson, R.M. Feenstra
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
J.C. Marinace
JES
Min Yang, Jeremy Schaub, et al.
Technical Digest-International Electron Devices Meeting