Oliver Schilter, Alain Vaucher, et al.
Digital Discovery
Lateral trench photodetectors (LTD) on silicon-on-insulator (SOI) have been fabricated using a fully CMOS compatible process. High speed (2.0 GHz), high quantum efficiency (51%), and excellent frequency response characteristics have been achieved at 851 nm with a supply voltage of only 3.3 V.
Oliver Schilter, Alain Vaucher, et al.
Digital Discovery
Ellen J. Yoffa, David Adler
Physical Review B
Douglass S. Kalika, David W. Giles, et al.
Journal of Rheology
S. Cohen, T.O. Sedgwick, et al.
MRS Proceedings 1983