Ranulfo Allen, John Baglin, et al.
J. Photopolym. Sci. Tech.
Lateral trench photodetectors (LTD) on silicon-on-insulator (SOI) have been fabricated using a fully CMOS compatible process. High speed (2.0 GHz), high quantum efficiency (51%), and excellent frequency response characteristics have been achieved at 851 nm with a supply voltage of only 3.3 V.
Ranulfo Allen, John Baglin, et al.
J. Photopolym. Sci. Tech.
R. Ghez, J.S. Lew
Journal of Crystal Growth
K.N. Tu
Materials Science and Engineering: A
D.D. Awschalom, J.-M. Halbout
Journal of Magnetism and Magnetic Materials