J.A. Barker, D. Henderson, et al.
Molecular Physics
Lateral trench photodetectors (LTD) on silicon-on-insulator (SOI) have been fabricated using a fully CMOS compatible process. High speed (2.0 GHz), high quantum efficiency (51%), and excellent frequency response characteristics have been achieved at 851 nm with a supply voltage of only 3.3 V.
J.A. Barker, D. Henderson, et al.
Molecular Physics
I.K. Pour, D.J. Krajnovich, et al.
SPIE Optical Materials for High Average Power Lasers 1992
Michael Ray, Yves C. Martin
Proceedings of SPIE - The International Society for Optical Engineering
M.A. Lutz, R.M. Feenstra, et al.
Surface Science