J.A. Barker, D. Henderson, et al.
Molecular Physics
Paper
High speed silicon lateral trench detector on SOI substrate
Abstract
Lateral trench photodetectors (LTD) on silicon-on-insulator (SOI) have been fabricated using a fully CMOS compatible process. High speed (2.0 GHz), high quantum efficiency (51%), and excellent frequency response characteristics have been achieved at 851 nm with a supply voltage of only 3.3 V.
Related
I.K. Pour, D.J. Krajnovich, et al.
SPIE Optical Materials for High Average Power Lasers 1992
Michael Ray, Yves C. Martin
Proceedings of SPIE - The International Society for Optical Engineering
M.A. Lutz, R.M. Feenstra, et al.
Surface Science