Conference paper
SRAM SER in 90, 130 and 180 NM bulk and SOI technologies
Ethan H. Cannon, Daniel D. Reinhardt, et al.
IRPS 2004
This paper describes techniques for mitigating single event upsets in master-slave flip-flop latches in 65 nm SOI device technology. Techniques are explained, modeled, and measured with hardware experiments. © 2007 IEEE.
Ethan H. Cannon, Daniel D. Reinhardt, et al.
IRPS 2004
Paul Solomon, Brian A. Bryce, et al.
Nano Letters
Michael S. Gordon, Ken Rodbell, et al.
IEEE TNS
Ethan H. Cannon, A.J. KleinOsowski, et al.
IEEE T-DMR