IIB-4 Gate-Self-Aligned n-channel and p-channel Germanium MOSFET’S

Paper

01 Jan 1991

IIB-4 Gate-Self-Aligned n-channel and p-channel Germanium MOSFET'S

No abstract available.

Paper

G.S. Oehrlein, C.M. Ransom, et al.

Applied Physics Letters

Paper

M.I. Nathan, T.N. Jackson, et al.

Journal of Electronic Materials

Conference paper

T.N. Jackson, G. Pepper, et al.

IEDM 1990

Paper

A.W. Kleinsasser, T.N. Jackson

Japanese Journal of Applied Physics