John G. Long, Peter C. Searson, et al.
JES
The dependence on photon energy of the persistent photoconductivity (PPC) in selectively doped high mobility Al0.3Ga0.7As-GaAs heterostructures has been measured at temperatures below 80 K. A decrease in conductivity due to light exposure at one wavelength after exposure to light at another wavelength - photo-quenching - is also found. It is concluded that deep centers in GaAs and AlGaAs other than the DX center in AlGaAs are mainly responsible for PPC. © 1983 AIME.
John G. Long, Peter C. Searson, et al.
JES
J.A. Barker, D. Henderson, et al.
Molecular Physics
T. Schneider, E. Stoll
Physical Review B
Julian J. Hsieh
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films