R.A. Webb, S. Washburn, et al.
Physica A: Statistical Mechanics and its Applications
A lateral hot-electron device has been fabricated in a plane of a two-dimensional electron gas. The transfer ratio of the device, α, was studied for different geometrical configurations of the emitter barrier. The maximum transfer ratio was greater than 0.99 at 4.2 K, corresponding to a current gain greater than 100 for devices with base widths of 220 nm. An emission of a single longitudinal optical phonon, by the injected electrons, has been observed.
R.A. Webb, S. Washburn, et al.
Physica A: Statistical Mechanics and its Applications
E.J. Pakulis, F. Fang, et al.
ICPS Physics of Semiconductors 1984
M. Heiblum
IEDM 1988
R.H. Koch, C.P. Umbach, et al.
Physica C: Superconductivity and its Applications