J.C. Portal, D.K. Maude, et al.
Superlattices and Microstructures
Shubnikovde Haas and persistent-photoconductivity measurements are used to study the mobility, the free-electron density (n), and the occupancy of the DX center in heavily doped n-GaAs [Si,Sn] as a function of doping level and hydrostatic pressure. The results show that the DX center produces a resonant donor level between the and L conduction-band minima at a concentration comparable with the doping level. For the Si-doped samples, comparison with local vibration-mode measurements indicates that the DX level can be identified with SiGa. © 1987 The American Physical Society.
J.C. Portal, D.K. Maude, et al.
Superlattices and Microstructures
T. Foster, D.K. Maude, et al.
Physica Scripta
T. Foster, D.K. Maude, et al.
Physica Scripta
J. Beerens, G. Grégoris, et al.
Physical Review B