Conference paper
REACTIVE ION ETCHING OF Al(Cu) ALLOYS.
C.-K. Hu, M.B. Small, et al.
MRS Fall Meeting 1986
In a previous paper, we presented both thermodynamic and kinetic models to describe the nonequilibrium state which occurs naturally when growing heterostructures in the Ga1-xAlxAs system by LPE. In this paper we both develop these two models and show them to be mutually compatible as applied to both the GaAs1-xPx and the Ga 1-xAlxAs systems.
C.-K. Hu, M.B. Small, et al.
MRS Fall Meeting 1986
A. Reisman, M. Berkenblit, et al.
Journal of Electronic Materials
R. Ghez
Journal of Crystal Growth
M.B. Small, R.M. Potemski
Proceedings of SPIE 1989