Biancun Xie, Madhavan Swaminathan, et al.
EMC 2011
We have used x-ray photoelectron spectroscopy to investigate electron cyclotron resonance oxygen plasma oxidation and hydrogen plasma deoxidation of GaAs surfaces. Experimental evidence shows that ECR oxidation at room temperature forms a stoichiometric oxide layer that is primarily composed of As2Os and Ga2O3. A hydrogen plasma is shown to clean GaAs surfaces and recover surface order, even at room temperature. Sample heating (200–300 °C) expedites the removal of Ga2O3 and improves surface order. In addition, no significant differences in oxidation and deoxidation were observed for sample biasing, either positively or negatively. © 1991, American Vacuum Society. All rights reserved.
Biancun Xie, Madhavan Swaminathan, et al.
EMC 2011
Elizabeth A. Sholler, Frederick M. Meyer, et al.
SPIE AeroSense 1997
Ranulfo Allen, John Baglin, et al.
J. Photopolym. Sci. Tech.
R. Ghez, J.S. Lew
Journal of Crystal Growth