Han-Su Kim, Kyuchul Chong, et al.
IEEE Electron Device Letters
The effect of electron-beam irradiation on the frequency response of modern bipolar transistors has been measured. The electron energies used are typical of those used in e-beam lithography. While the current gain of the transistors at dc is sharply reduced, the high-frequency response is virtually unchanged. This result demonstrates that the frequency response is limited by the base transit line. © 1989 IEEE
Han-Su Kim, Kyuchul Chong, et al.
IEEE Electron Device Letters
Joachim N. Burghartz, Andrew C. Megdanis, et al.
IEEE Electron Device Letters
Shu Jen Han, Jianshi Tang, et al.
Nature Nanotechnology
Damon B. Farmer, Hsin-Ying Chiu, et al.
Nano Letters