J.M. Hong, T.P. Smith III, et al.
Journal of Crystal Growth
We have observed fractional quantization of very few electrons confined in a semiconductor quantum dot using capacitance spectroscopy. The number of electrons per dot varies from 0 to about 40 as a function of bias on the quantum capacitors. The capacitance spectra have clear minima at gate voltages and magnetic fields, where the filling factors are 1/3 and 2/3. These measurements may allow direct comparison with few-particle calculations.
J.M. Hong, T.P. Smith III, et al.
Journal of Crystal Growth
K. Ismail, K.Y. Lee, et al.
IEEE Electron Device Letters
T.P. Smith III
SSDM 1991
D.P. Halliday, J.M. Eggleston, et al.
Solid State Communications