Conference paper
Si/SiGe CMOS: Can it extend the lifetime of Si?
K. Ismail
ISSCC 1997
Paper
Novel Properties of a 0.1-μm-Long Split-Gate MODFET
Abstract
A MODFET with two 30-nm-long gates, separated by 40 nm, has been fabricated using ultrahigh-resolution electron-beam lithography. The proximity of the two gate fingers, together with the ability to independently bias them, results in the following features: a) tunability of the threshold voltage, b) enhancement of the transconductance especially at low current levels, c) reduction in short-channel effects, and d) high-voltage gain and cutoff frequency. © 1990 IEEE
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