K.N. Tu
Materials Science and Engineering: A
We have calculated the gain of laser heterostructures whose active regions consist of two strongly coupled quantum wells subjected to an electric field. The results demonstrate that by using two 40 Å GaAs wells separated by an 11 Å Ga0.7Al0.3As barrier a field-induced wavelength tunability of over 7 nm is possible at room temperature. © 1994.
K.N. Tu
Materials Science and Engineering: A
William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010
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Zeitschrift fur Kristallographie - New Crystal Structures
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