E. Cartier, V. Narayanan, et al.
VLSI Technology 2004
The potential of silicon and germanium lattice matched epitaxial oxide multilayer heterostructures was analyzed via the realization of Ge on buried insulator field effect transistors. Hydrogen passivated Si(111) wafers were inserted into a molecular beam epitaxial (MBE) growth chamber. The working of field-effect transistors on germanium-on-insulator layers was also described. The results show that high quality heterostructures were grown by controlling the crystallization and roughening behavior of Si or Ge on oxide surfaces.
E. Cartier, V. Narayanan, et al.
VLSI Technology 2004
M. Copel, E. Cartier, et al.
Applied Physics Letters
N.A. Bojarczuk, S. Guha
Proceedings of SPIE - The International Society for Optical Engineering
D.J. Kim, D.Y. Ryu, et al.
Journal of the Korean Physical Society