Sang-Min Park, Mark P. Stoykovich, et al.
Advanced Materials
The electrical and physical properties of ultra-thin zirconium silicate films deposited by the jet-vapor-deposition (JVD) process were reported. The fabrication of the films with equivalent oxide thickness of 1 nm with high thermal stability, low leakage and good electrical properties was shown. It was shown that zirconium silicate films can survive an annealing temperature as high as 1000°C.
Sang-Min Park, Mark P. Stoykovich, et al.
Advanced Materials
Julien Autebert, Aditya Kashyap, et al.
Langmuir
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Michael Ray, Yves C. Martin
Proceedings of SPIE - The International Society for Optical Engineering