Min Yang, Jeremy Schaub, et al.
Technical Digest-International Electron Devices Meeting
Paper
Electron energy levels in GaAs-Ga1-xAlxAs heterojunctions
Abstract
Calculated results for energy levels of electrons in GaAs-Ga1-xAlx As heterojunctions are presented and their sensitivity to various parameters including acceptor doping level in the GaAs, heterojunction barrier height, effective-mass and dielectric-constant discontinuities, interface grading, and ambient temperature is examined. © 1984 The American Physical Society.
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