Effect of ion bombardment on the plasma-assisted etching and deposition of plasma perfluoropolymer thin films

F. Fracassi; E. Occhiello; J.W. Coburn

doi:10.1063/1.339197

Journal of Applied Physics

Paper

01 Dec 1987

Effect of ion bombardment on the plasma-assisted etching and deposition of plasma perfluoropolymer thin films

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Abstract

A study of the etching and deposition of plasma perfluoropolymer thin films has been carried out by using quartz-crystal microbalance methods for a range of feed gas mixtures.

Paper

The role of energetic ion bombardment in silicon-fluorine chemistry

J.W. Coburn, H.F. Winters

Nuclear Inst. and Methods in Physics Research, B

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On the effect of low-energy ion bombardment on polystyrene and polymethylmethacrylate etch rates in rf plasmas

E. Occhiello, F. Garbassi, et al.

Plasma Chemistry and Plasma Processing

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Plasma diagnostics of an rf-sputtering glow discharge

J.W. Coburn, Eric Kay

Applied Physics Letters

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Plasma Sources in Analytical Mass Spectrometry

J.W. Coburn, W.W. Harrison

Applied Spectroscopy Reviews

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Abstract

Related

The role of energetic ion bombardment in silicon-fluorine chemistry

On the effect of low-energy ion bombardment on polystyrene and polymethylmethacrylate etch rates in rf plasmas

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Plasma Sources in Analytical Mass Spectrometry