H.F. Winters, J.W. Coburn
Applied Physics Letters
The surface chemistry of silicon bombarded with a CF+3 ion beam has been studied using X-ray photoemission and Auger electron spectroscopy. The chemical species and their depth distribution in a surface exposed to CF+3 ions of different energies (0.5 kV and 2 kV) are analyzed and are related to the etching behavior of silicon. The phenomenon of electron-induced desorption of surface fluorine is examined. XPS binding energies and the relative photoionization cross sections are also determined for a number of Si, C and F containing compounds, and these are used for chemical identification of the surface species. © 1979.
H.F. Winters, J.W. Coburn
Applied Physics Letters
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Journal of Applied Physics
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Japanese Journal of Applied Physics
Harold F. Winters, J.W. Coburn, et al.
JVSTA