PaperEfficient electroluminescence from GaAs diodes at 300°KH. Rupprecht, J. Woodall, et al.Applied Physics Letters
PaperEffect of deep levels on the optical and electrical properties of copper-doped GaAs p-n junctionsT.N. Morgan, M.H. Pilkuhn, et al.Physical Review
PaperTP-A3 Capless Annealing of GaAs Using a Controlled Excess as Vapor Pressure SourceH. Rupprecht, J. WoodallIEEE T-ED
PaperIVA-7 Surface Layer Impurity Accumulation Due to Evaporation of GaAs During AnnealingJ. Woodall, H. Rupprecht, et al.IEEE T-ED
