PaperTemperature dependence of the photoreflectance of a strained layer (001) In0.21Ga0.79As/GaAs single quantum wellY.S. Huang, H. Qiang, et al.Journal of Applied Physics
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PaperIIIB-8 High-Density Optical Storage Using Arsenic Nanoclusters in GaAs and AlGaAsM.R. Melloch, D.D. Nolte, et al.IEEE T-ED
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