Amlan Majumdar, Yanning Sun, et al.
IEEE T-ED
Many fabricated III-V MOSFETs have electrically thin field oxide (FOX) that leads to parasitic currents and parasitic capacitances. When extracting long-channel mobility of such devices using the conventional two-FET method, some of these parasitic components are not subtracted out. In this paper, we present a simple four-FET method for extracting long-channel mobility that works well even when the equivalent oxide thickness (EOT) of the FOX is equal to the EOT of the FET gate oxide.
Amlan Majumdar, Yanning Sun, et al.
IEEE T-ED
Can Bayram, John A. Ott, et al.
Advanced Functional Materials
S. Kim, John A. Ott, et al.
IEDM 2019
Robert L. Bruce, Syed Ghazi Sarwat, et al.
IRPS 2021