Publications

307 results at IEEE Electron Device Letters

Graded-SiGe-Base, Poly-Emitter Heterojunction Bipolar Transistors
- - Gary L. Patton
  - David L. Harame
  - et al.
- 1989
- IEEE Electron Device Letters
p-Channel FET Based on p/n Double-Quantum-Well Heterostructure
- - Richard A. Kiehl
  - Steven L. Wright
  - et al.
- 1989
- IEEE Electron Device Letters
Epitaxial base transistors with ultrahigh vacuum chemical vapor deposition (uhv/cvd) epitaxy: Enhanced profile control for greater flexibility in device design
- - David L. Harame
  - Johannes M.C. Stork
  - et al.
- 1989
- IEEE Electron Device Letters
A Submicrometer High-Performance Bipolar Technology
- - Tze-Chiang Chen
  - Kai-Yap Toh
  - et al.
- 1989
- IEEE Electron Device Letters
High-Gain Pseudomorphic InGaAs Base Ballistic Hot-Electron Device
- - K. Seo
  - Mordehai Heiblum
  - et al.
- 1989
- IEEE Electron Device Letters
High-Quality Deposited Gate Oxide MOSFET’s and the Importance of Surface Preparation
- - J.W. Stasiak
  - J. Batey
  - et al.
- 1989
- IEEE Electron Device Letters
Recombination Lifetime Profiling in Very Thin Si Epitaxial Layers Used for Bipolar VLSI
- - Paolo Spirito
  - S. Bellone
  - et al.
- 1989
- IEEE Electron Device Letters
Sidewall Oxidation of Polycrystalline-Silicon Gate
- - Joseph Piccirillo
  - Arup Bhattacharyya
  - et al.
- 1989
- IEEE Electron Device Letters
Sub-300-ps CBL Circuits
- - S.K. Wiedmann
  - Tze Chiang Chen
  - et al.
- 1989
- IEEE Electron Device Letters
Hot-Electron-Induced Instability in 0.5-μm p-Channel MOSFET’s Patterned Using Synchrotron X-ray Lithography
- - C.C.-H. Hsu
  - L.K. Wang
  - et al.
- 1989
- IEEE Electron Device Letters