Publications

307 results at IEEE Electron Device Letters

Self-Aligned SiGe-Base Heterojunction Bipolar Transistor by Selective Epitaxy Emitter Window (SEEW) Technology
- - Joachim N. Burghartz
  - James H. Comfort
  - et al.
- 1990
- IEEE Electron Device Letters
50-GHz Self-Aligned Silicon Bipolar Transistors with Ion-Implanted Base Profiles
- - James Warnock
  - John D. Cressler
  - et al.
- 1990
- IEEE Electron Device Letters
The Implementation of a Reduced-Field Profile Design for High-Performance Bipolar Transistors
- - Pong-Fei Lu
  - James H. Comfort
  - et al.
- 1990
- IEEE Electron Device Letters
Novel Properties of a 0.1-μm-Long Split-Gate MODFET
- - K. Ismail
  - K.Y. Lee
  - et al.
- 1990
- IEEE Electron Device Letters
75-GHz fT SiGe-Base Heterojunction Bipolar Transistors
- - Gary L. Patton
  - James H. Comfort
  - et al.
- 1990
- IEEE Electron Device Letters
Selectively Regrown Contacts to Field-Effect Transistors with Two-Dimensional Electron-Gas Channels
- - A. Palevski
  - Paul M. Solomon
  - et al.
- 1990
- IEEE Electron Device Letters
Collector Signal Delay in the Presence of Velocity Overshoot
- - Steven E. Laux
  - Wai Lee
- 1990
- IEEE Electron Device Letters
A Submicrometer High-Performance Bipolar Technology
- - Tze-Chiang Chen
  - Kai-Yap Toh
  - et al.
- 1989
- IEEE Electron Device Letters
Modeling of Currents in a Vertical p-n-p Transistor with Extremely Shallow Emitter
- - Mary Jo Saccamango
  - Tze-Chiang Chen
- 1989
- IEEE Electron Device Letters
Epitaxial base transistors with ultrahigh vacuum chemical vapor deposition (uhv/cvd) epitaxy: Enhanced profile control for greater flexibility in device design
- - David L. Harame
  - Johannes M.C. Stork
  - et al.
- 1989
- IEEE Electron Device Letters