Reduction in dislocation densities in the step-graded growth of InGaAs by molecular-beam epitaxy
- C.M. Serrano
- Chin-An Chang
- 1981
- Applied Physics Letters
Publications
2347 results at Applied Physics Letters
Annealing ambient: A useful probe for interface interactions in thin films
- Chin-An Chang
- 1981
- Applied Physics Letters
Ge-GaAs superlattices by molecular beam epitaxy
- Chin-An Chang
- Armin Segmüller
- et al.
- 1981
- Applied Physics Letters
Low Schottky barrier of rare-earth silicide on n-Si
- K.N. Tu
- R.D. Thompson
- et al.
- 1981
- Applied Physics Letters
Semimetallic InAs-GaSb superlattices to the heterojunction limit
- L.L. Chang
- N. Kawai
- et al.
- 1981
- Applied Physics Letters
A technique for comparing the bulk and surface structure of defects in thin films using the scanning transmission electron microscope.
- M.M.J. Treacy
- W. Krakow
- et al.
- 1981
- Applied Physics Letters
Two-carrier nature of interface-state generation in hole trapping and radiation damage
- S.K. Lai
- 1981
- Applied Physics Letters
Silicide films for archival optical storage
- K.N. Tu
- K.Y. Ahn
- et al.
- 1981
- Applied Physics Letters
Kinetics and mechanism of amorphous hydrogenated silicon growth by homogeneous chemical vapor deposition
- B.A. Scott
- R.M. Plecenik
- et al.
- 1981
- Applied Physics Letters
Surface compositional modifications during O+2 bombardment of binary alloys
- Ming L. Yu
- Wilhad Reuter
- 1981
- Applied Physics Letters