A novel inspection and annealing procedure to rejuvenate phase change memory from cycling-induced degradations for storage class memory applicationsWin-San KhwaJau-Yi Wuet al.2014IEDM 2014
First demonstration of high-Ge-content strained-Si1-xGex (x=0.5) on insulator PMOS FinFETs with high hole mobility and aggressively scaled fin dimensions and gate lengths for high-performance applicationsPouya HashemiKarthik Balakrishnanet al.2014IEDM 2014
0.026μm2 high performance Embedded DRAM in 22nm technology for server and SOC applicationsC. PeiG. Wanget al.2014IEDM 2014
Experimental demonstration and tolerancing of a large-scale neural network (165,000 synapses), using phase-change memory as the synaptic weight elementGeoffrey W. BurrRobert M. Shelbyet al.2014IEDM 2014