Publications

2357 results at Journal of Applied Physics

Deep donor levels (DX centers) in III-V semiconductors
- - P.M. Mooney
- 1990
- Journal of Applied Physics
Oxidation and formation mechanisms in disilicides: VSi₂ and CrSi₂, inert marker experiments and interpretation
- - O. Thomas
  - L. Stolt
  - et al.
- 1990
- Journal of Applied Physics
Flux lattice behavior in high-T_c materials studied by neutron depolarization
- - L. Crow
  - R. Goyette
  - et al.
- 1990
- Journal of Applied Physics
Low-temperature deposition of silicon dioxide films from electron cyclotron resonant microwave plasmas
- - T.V. Herak
  - T.T. Chau
  - et al.
- 1989
- Journal of Applied Physics
Electrical characterization of GaAs/Al_0.30Ga_0.70 As p⁺-n heterojunctions grown by metalorganic vapor phase epitaxy
- - M.A. Tischler
  - H. Baratte
  - et al.
- 1989
- Journal of Applied Physics
In situ measurement of ion-beam-induced deposition of gold
- - A.D. Dubner
  - A. Wagner
- 1989
- Journal of Applied Physics
Trap creation in silicon dioxide produced by hot electrons
- - D.J. DiMaria
  - J.W. Stasiak
- 1989
- Journal of Applied Physics
Inert gas reactive ion etching damage to GaAs using inverted heterojunctions
- - C.M. Knoedler
  - L. Osterling
  - et al.
- 1989
- Journal of Applied Physics
Structural depth profiling of iron oxide thin films using grazing incidence asymmetric Bragg x-ray diffraction
- - Michael F. Toney
  - Sean Brennan
- 1989
- Journal of Applied Physics
A photoemission investigation of surface processes affecting the reactive ion etching of TiSi₂ in CF₄
- - S.W. Robey
  - M.A. Jaso
  - et al.
- 1989
- Journal of Applied Physics