Nature of band bending at semiconductor surfaces by contactless electroreflectance
- X. Yin
- Xinxin Guo
- et al.
- 1992
- Applied Physics Letters
Publications
101 results for G.D. Pettit
Structure and composition of GaAs(001) surfaces
- J. Falta
- R.M. Tromp
- et al.
- 1992
- Physical Review Letters
Performance of In0.53Ga0.47As metal-semiconductor-metal photodetectors at 1.55 μm
- F. Tong
- D.T. McInturff
- et al.
- 1992
- LEOS 1992
Geometric ordering, surface chemistry, band bending, and work function at decapped GaAs(100) surfaces
- I.M. Vitomirov
- A. Raisanen
- et al.
- 1992
- Physical Review B
Chemical and electronic properties of Al/[vicinal GaAs(100)] and Au/[vicinal GaAs(100)] interfaces
- S. Chang
- I.M. Vitomirov
- et al.
- 1992
- Physical Review B
Photoreflectance study of the surface Fermi level at (001) n- and p-type GaAs surfaces
- X. Yin
- H.-M. Chen
- et al.
- 1992
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
The Frequency Behavior of InGaAs/AlInAs Metal - Semiconductor - Metal Photodetectors at Low Bias Voltages for Data Communication Applications
- J.H. Burroughes
- M.S. Milshtein
- et al.
- 1992
- IEEE Photonics Technology Letters
Large area, low voltage, transit time limited InGaAs metal semiconductor metal photodetectors
- Stephen E. Ralph
- M. Hargis
- et al.
- 1992
- Applied Physics Letters
Uniaxial stress study of the quantum transitions in a strained layer (001) In0.21Ga0.79As/GaAs single quantum well
- H. Qiang
- Fred H. Pollak
- et al.
- 1992
- Surface Science
Impact of surface processing on Al/GaAs(100) interface states
- I.M. Vitomirov
- A. Raisanen
- et al.
- 1992
- Solid State Communications