Transfer Learning on Edge Using 14nm CMOS-compatible ReRAM Array and Analog In-memory Training AlgorithmTakashi AndoOmobayode Fagbohungbeet al.2025IEDM 2025
Monolithic Stacked FET with Stepped Channels for Future Logic TechnologiesChen ZhangSeungmin Songet al.2024IEDM 2024
Advanced Multi-Vt Enabled by Selective Layer Reductions for 2nm Nanosheet Technology and BeyondRuqiang BaoYusuke Onikiet al.2024IEDM 2024
Reversing a decades-long scaling law of dielectric breakdown for ReRAM forming voltage reduction - Modeling competition among defect generation and annihilation processesErnest Y WuTakashi Andoet al.2023IEDM 2023