Progress and Gaps in Double Spin-torque MTJs for Last Level Cache Applications
- Guohan Hu
- Philip Trouilloud
- et al.
- 2025
- IEDM 2025
Publications
3 results for Matthias Gottwald
First demonstration of high retention energy barriers and 2 ns switching, using magnetic ordered-alloy-based STT MRAM devices
- Matthias Gottwald
- Guohan Hu
- et al.
- 2024
- VLSI Technology and Circuits 2024
2X reduction of STT-MRAM switching current using double spin-torque magnetic tunnel junction
- Guohan Hu
- Jonathan Sun
- et al.
- 2021
- IEDM 2021