Publications

138 results for B.S. Meyerson

Submicrometer Si and Si-Ge Epitaxial-Bas Double-Poly Self-Aligned Bipolar Transistors
- - T.C. Chen
  - E. Ganin
  - et al.
- 1991
- IEEE T-ED
Self-Aligned Bipolar Epitaxial Base n-p-n Transistors by Selective Epitaxy Emitter Window (SEEW) Technology
- - Joachim N. Burghartz
  - Siegfried R. Mader
  - et al.
- 1991
- IEEE T-ED
High-Mobility Modulation-Doped Graded Sige-Channel P-Mosfet's
- - Sophie Verdonckt-Vandebroek
  - Emmanuel F. Crabbé
  - et al.
- 1991
- IEEE Electron Device Letters
SiGe alloys: growth, properties and applications
- - Maurizio Arienzo
  - Subramanian S. Iyer
  - et al.
- 1991
- Applied Surface Science
Epitaxial-base double-poly self-aligned bipolar transistors
- - E. Ganin
  - T.C. Chen
  - et al.
- 1990
- IEDM 1990
Bistable conditions for low-temperature silicon epitaxy
- - Bernard S. Meyerson
  - Franz J. Himpsel
  - et al.
- 1990
- Applied Physics Letters
A 26 ps self-aligned epitaxial silicon base bipolar technology
- - J.H. Comfort
  - P.F. Lu
  - et al.
- 1990
- VLSI Technology 1990
Low temperature operation of Si and SiGe bipolar transistors
- - E.F. Crabbe
  - G.L. Patton
  - et al.
- 1990
- IEDM 1990
SiGe-base heterojunction bipolar transistors: Physics and design issues
- - G.L. Patton
  - J.M.C. Stork
  - et al.
- 1990
- IEDM 1990
Profile leverage in self-aligned epitaxial Si or SiGe base bipolar technology
- - J.H. Comfort
  - G.L. Patton
  - et al.
- 1990
- IEDM 1990