PaperPhotocreation and photobleaching of a-Si N1.6:H/c-Si interface states studied by photocapacitance transient spectroscopyC. Godet, Jerzy KanickiPhysica B: Physics of Condensed Matter
PaperElectrically active point defects in amorphous silicon nitride: An illumination and charge injection studyD.T. Krick, P. Lenahan, et al.Journal of Applied Physics
PaperDefects in amorphous hydrogenated silicon nitride filmsJerzy Kanicki, W.L. WarrenJournal of Non-Crystalline Solids
PaperSome electrical properties of amorphous silicon/amorphous silicon nitride interfaces: Top nitride and bottom nitride configurations in MNS and TFT devicesC. Godet, Jerzy Kanicki, et al.Journal of Applied Physics
