PaperEffect of reconstruction of a semiconductor surface on the crystal growthJ.A. Van VechtenApplied Physics Letters
PaperEntropy of ionization and temperature variation of ionization levels of defects in semiconductorsJ.A. Van Vechten, C.D. ThurmondPhysical Review B
PaperFormation of interstitial-type dislocation loops in tetrahedral semiconductors by precipitation of vacanciesJ.A. Van VechtenPhysical Review B
PaperAn electron microscope investigation of the effect of phosphorous doping on the plasma etching of polycrystalline siliconE.A. Irene, E. Tierney, et al.JES
