A.C. Callegari, D. Lacey, et al.
Solid-State Electronics
Paper
Uniform and thermally stable AuGeNi ohmic contacts to GaAs
Abstract
An in situ rf sputter precleaning of the GaAs substrate before AuGeNi ohmic metal deposition yields contact resistance Rc=0.11 Ω mm at a peak doping of ∼1018/cm3. Excellent uniformity and thermal stability are achieved across the wafer. The contacts do not deteriorate appreciably after themal treatment at 410°C for 57 h.
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